Samsung, a leading technology company, has launched the world’s first 24-gigabit GDDR7 DRAM, featuring exceptionally high speed and unprecedented capacity. This innovative DRAM is engineered to meet the requirements of next-generation applications, including data centers and artificial intelligence workstations.
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Samsung GDDR7 DRAM
The upcoming GDDR7 DRAM will leverage cutting-edge process nodes and PAM3 signaling to reach speeds of 40 gigabits per second, representing a 25% increase over its predecessor. Additionally, Samsung has integrated power-saving technologies from its mobile product line to enhance efficiency and decrease unnecessary power usage by more than 30%. To ensure operational stability at these elevated speeds, the GDDR7 DRAM will incorporate power-gating design techniques to minimize current leakage.
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The company plans to initiate the validation of its new memory solution for next-generation AI computing systems with leading GPU clients in late 2024, followed by commercialization in early 2025.
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During the announcement of the new DRAM, YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics, stated: “Following the introduction of the industry’s first 16GB GDDR7 last year, Samsung has solidified its technological leadership in the graphics DRAM sector with this recent development. We are committed to maintaining our leadership in the graphics DRAM market by delivering next-generation products that meet the increasing demands of the AI sector. The 24GB GDDR7 features 5th-generation 10-nanometer-class DRAM, allowing for a 50% increase in cell density while preserving the same package size as its predecessor.”
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